Radiation-Emitting Semiconductor Chip

ABSTRACT

A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.

This patent application is a national phase filing under section 371 ofPCT/EP2017/065715, filed Jun. 26, 2017, which claims the priority ofGerman patent application 102016112587.3, filed Jul. 8, 2016, each ofwhich is incorporated herein by reference in its entirety.

TECHNICAL FIELD

The present application relates to a radiation-emitting semiconductorchip.

BACKGROUND

For the efficient operation of radiation-emitting semiconductor devicessuch as, for example, light-emitting diode semiconductor chips, anefficient current distribution in the lateral direction is desired. Forthis purpose, for example, metallic contact structures or transparentconductive layers can be used. However, this can lead to absorptionlosses, which reduce the efficiency of the semiconductor chip.

SUMMARY OF THE INVENTION

Embodiments provide a radiation-emitting semiconductor chip, which ischaracterized by high efficiency and low absorption losses.

Embodiments provide a radiation-emitting semiconductor chip comprising asemiconductor body. The semiconductor body has an active region intendedfor generating radiation. For example, the active region is intended forgenerating radiation in the ultraviolet, visible or infrared spectralrange. In particular, the active region is arranged between a firstsemiconductor layer and a second semiconductor layer, wherein the firstsemiconductor layer and the second semiconductor layer are differentfrom one another at least in places with respect to their conductiontype, so that the active region is located in a pn junction. The firstsemiconductor layer, the second semiconductor layer and the activeregion may each be formed in one or more layers.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the semiconductor chip has a first contact layer. Inparticular, the first contact layer has a first contact area forexternal electrical contacting of the semiconductor chip. For example,the first contact area is formed for electrically contacting the firstsemiconductor layer. Furthermore, the first contact layer may have afirst contact finger structure connected to the first contact area. Thefirst contact finger structure is formed for lateral distribution ofcharge carriers, which are imprinted over the first contact area duringoperation of the radiation-emitting semiconductor chip.

A lateral direction is defined as a direction, which extends parallel toa main extension plane of the active region. Accordingly, a verticaldirection extends perpendicular to the main extension plane of theactive region.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the semiconductor chip has a second contact layer,which has a second contact area for external electrical contacting ofthe semiconductor chip. In particular, the second contact layer isformed for electrically contacting the second semiconductor layer. Forexample, the second contact layer has a second contact finger structureconnected to the second contact area.

Expediently, there is no direct electrical contact between the firstcontact layer and the second contact layer. In particular, a currentpath extends between the first contact layer and the second contactlayer through the semiconductor body, in particular through the activeregion.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the first contact finger structure and the secondcontact finger structure overlap at least in places in a plan view ofthe semiconductor chip. Regions in which the first contact fingerstructure and the second contact finger structure overlap may be usedboth for the lateral current distribution for the contacting of thefirst semiconductor layer and for the lateral current distribution forthe contacting of the second semiconductor layer. For example, at least10%, at least 30% or at least 90% of the first contact finger structureare located within the second contact finger structure in plan view ofthe semiconductor chip. The larger this percentage is, the more area ofthe semiconductor chip, which cannot be used for generating radiationanyway due to the second contact finger structure, can additionally beused for the charge carrier distribution via the first contact fingerstructure. Compared to a radiation-emitting semiconductor chip, in whichthe first contact layer and the second contact layer are arrangedalongside one another without overlapping, the area of the active regioncovered by the contact layers can be reduced. However, one of thecontact layers, for example, the first contact layer, may also have atleast one contact finger, which is formed without overlap with theother, for example, the second contact layer. In contrast to this, thefirst contact area and the second contact area are expediently arrangewithout overlapping, so that both contact areas are accessible for theexternal electrical contacting.

In particular, the first contact finger structure may have a number ofcontact fingers larger than or equal to the number of contact fingers ofthe second contact finger structure.

A contact finger structure is generally understood to be a region of acontact layer, which has a comparatively small extent in comparison tothe contact area provided for the electrical contacting, at least in onelateral direction.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the semiconductor chip has a current distributionlayer. The current distribution layer is electrically conductivelyconnected to the first contact layer. For example, the currentdistribution layer adjoins the first contact layer directly. Forexample, the first contact layer is arranged completely within thecurrent distribution layer in a plan view of the semiconductor chip.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the semiconductor chip has a connection layer. Theconnection layer is electrically conductively connected to the firstcontact layer, for example, via the current distribution layer. Inparticular, the connection layer adjoins the semiconductor bodydirectly, in particular, the first semiconductor layer. For example, theconnection layer does not directly adjoin the first contact layer at anyplace.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the semiconductor chip has an insulation layer. Theinsulation layer, for example, contains a dielectric material. Thedielectric material is an electrically weak or non-conductive,non-metallic material, whose charge carriers are generally not freelymovable—for example, at the usual operating currents. The insulationlayer contains, for example, at least one of the following materials:silicon nitride, silicon dioxide, silicon oxynitride, aluminum oxide,titanium oxide, tantalum oxide, niobium oxide.

The insulation layer covers, for example, at least 30%, at least 50%, atleast 70% or at least 90% of the entire base area of the semiconductorchip in plan view. By way of example, the insulation layer covers atmost 99% of the entire base area of the semiconductor chip in plan view.

For example, the insulation layer is arranged in places between theconnection layer and the current distribution layer, in particular inthe vertical direction. A direct vertical current path between theconnection layer and the current distribution layer is thus prevented atleast in places by means of the insulation layer.

For example, the insulation layer is arranged in vertical directionbetween the first contact layer and the second contact layer.

In at least one embodiment of the radiation-emitting semiconductor chip,the radiation-emitting semiconductor chip comprises a semiconductor bodyhaving an active region intended for generating radiation. Thesemiconductor chip comprises a first contact layer having a firstcontact area for electrically contacting the semiconductor chip and afirst contact finger structure connected to the first contact area. Thesemiconductor chip comprises a second contact layer having a secondcontact area for external electrical contacting of the semiconductorchip and a second contact finger structure connected to the secondcontact area, wherein the first contact finger structure and the secondcontact finger structure overlap in places in plan view of thesemiconductor chip. The semiconductor chip comprises a currentdistribution layer electrically conductively connected to the firstcontact layer. The semiconductor chip comprises a connection layerelectrically conductively connected to the first contact layer via thecurrent distribution layer. The semiconductor chip comprises aninsulation layer containing a dielectric material, wherein theinsulation layer is arranged in places between the connection layer andthe current distribution layer.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the insulation layer covers the connection layer toat least 30% of the area of the connection layer. For example, theinsulation layer covers the connection layer to at least 50%, to atleast 70% or to at least 90%. The insulation layer may thus cover theconnection layer over a large area. For example, the insulation layercovers the connection layer to at most 95% or at most 99%.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the insulation layer has at least one opening. Forexample, the connection layer and the current distribution layer adjoinone another in the opening. In other words, the connection layer and thecurrent distribution layer are electrically connected to one another inthe region of the opening. In particular, the connection layer and thecurrent distribution layer adjoin one another only in the at least oneopening. For example, the opening is surrounded by the material of theinsulation layer along its entire circumference. For example, theopening is filled at least in regions with material of the currentdistribution layer.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the insulation layer has a plurality of openings.Via the position of the openings in the production of the semiconductorchip it is possible to adjust at which places the current distributionlayer adjoins the connection layer. For example, the openings are formedwith regard to their distribution density and/or their size, in such away that a uniform lateral current impression is promoted in thesemiconductor chip. A distance between two adjacent openings is, forexample, between 5 μm and 60 μm inclusive, approximately between 20 μmand 50 μm inclusive. A diameter of the openings is in particular between0.5 μm and 20 μm inclusive, for example, between 2 μm and 6 μminclusive. In the case of a non-round opening, the diameter isunderstood to mean the longest lateral extent. The shape and/or size ofthe openings may also differ from each other. For example, one or moreopenings may be provided at the edge of the semiconductor chip, whichare larger than openings at the center of the semiconductor chip.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the insulation layer is formed as a filter layer,which predominantly transmits incident radiation within a first angularrange and predominantly reflects incident radiation within a secondangular range. “Predominantly” means in particular that at least 60% ofthe radiation is transmitted or reflected.

In particular, the angles of the first angular range relative to thevertical direction are smaller than the angles of the second angularrange. Radiation incident on the insulation layer at comparatively steepangles is therefore predominantly transmitted, while radiation incidentat comparatively flat angles is predominantly reflected. Radiationcomponents having a comparatively flat profile, which cannot be coupledout of the semiconductor chip anyway, are thus already retained at theinsulation layer. Radiation absorption losses in layers arrangeddownstream of the insulation layer, for example, in the currentdistribution layer, can thus be reduced.

For example, the boundary between the first angular range and the secondangular range is determined by the critical angle of total reflection,which can be derived from the refractive index of the semiconductor bodyand the refractive index of the surrounding medium. In this case, thefirst angular range comprises angles, which are smaller than this limit.The second angular range, on the other hand, comprises angles, which arelarger than this limit.

The insulation layer formed in particular as a filter layer may consistof a single layer. This means, in particular that the insulation layeris formed homogeneously and is made, for example, of a single dielectricmaterial. The dielectric material advantageously has an adaptedrefractive index, wherein “adapted” means that the refractive index ofthe dielectric material is larger than or equal to the refractive indexof a medium surrounding the insulation layer. The surrounding medium isarranged downstream of the insulation layer proceeding from thesemiconductor body. The surrounding medium comprises elements, whichenclose the semiconductor body and in particular have a protectivefunction. For example, the semiconductor body may have a passivationlayer and/or encapsulation as a surrounding medium.

In an alternative embodiment, the insulation layer, which in particularis formed as a filter layer, is formed in multiple layers and has atleast two sublayers, which differ from one another in their refractiveindex. Preferably, the filter layer comprises a layer sequenceconsisting of alternating sublayers having a higher refractive index anda lower refractive index. In particular, the sublayers with a higherrefractive index have a lower thickness than the sublayers with a lowerrefractive index.

The insulation layer, which in particular is formed as a filter layer,preferably has a thickness of between 400 nm and 800 nm inclusive. Whendimensioning the thickness of the insulation layer, care must be taken,on the one hand, to limit production effort, which is larger in the caseof a multi-layer structure of the insulation layer than in the case of asingle-layer structure, and, on the other hand, to achieve the desiredfilter characteristic, which can be better achieved with a multi-layerstructure than with a single-layer structure. With a thickness between400 nm and 800 nm inclusive a suitable compromise between productioneffort and filter characteristic can be achieved.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the insulation layer adjoins the connection layerand the current distribution layer. Between the connection layer and thecurrent distribution layer, there are no further layers in the verticaldirection apart from the insulation layer, at least in places. In otherwords, the insulation layer is at least in places the only layerarranged between the connection layer and the current distributionlayer.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the connection layer has a thickness less than thecurrent distribution layer. For example, the current distribution layeris at least twice as thick as the connection layer. For example, athickness of the connection layer is between 3 nm and 30 nm inclusive,approximately between 5 nm and 25 nm inclusive. A thickness of thecurrent distribution layer is, for example, between 30 nm and 200 nminclusive, approximately between 50 nm and 150 nm inclusive. Inparticular, due to the larger thickness, the current distribution layeris characterized by a larger transverse conductivity than the connectionlayer. The connection layer, on the other hand, exhibits lowerabsorption losses for the radiation passing through the connection layerdue to the lower thickness.

Radiation absorption losses in the current distribution layer can bereduced by means of the insulation layer acting in particular as afilter layer. In other words, a high transverse conductivity with at thesame time low absorption losses is achieved by means of the combinationof a connection layer and a current distribution layer and in particularan insulation layer arranged therebetween in the vertical direction.

According to at least one embodiment of the radiation-emittingsemiconductor chip, at least 50% of the entire area of the secondcontact finger structure overlaps the first contact finger structure. Inother words, at least half of the area covered by the second contactfinger structure is also used for the current distribution via the firstcontact finger structure.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the semiconductor body has at least one recessextending from the radiation exit surface through the active region. Inparticular, the second contact layer is electrically conductivelyconnected to the semiconductor body in the recess. For example, thesecond contact layer adjoins the semiconductor body directly, inparticular the second semiconductor layer. For example, material of theinsulation layer and/or material of the current distribution layer isarranged in the recess at least in places.

However, the recess can also be completely filled with material of thesecond contact layer.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the insulation layer is arranged between the firstcontact layer and the second contact layer. The insulation layer alsoserves for the electrical separation between the first and the secondcontact layer, so that there is in particular no direct current pathbetween these contact layers.

According to at least one embodiment of the radiation-emittingsemiconductor chip, there is no direct vertical current path between thefirst contact layer and the semiconductor body at any place of thesemiconductor chip. A charge carrier injection from the first contactlayer into the semiconductor body thus does not take place directlybelow the first contact layer, but at a distance from it in the lateraldirection. This reduces the amount of radiation generated in the activeregion directly below the first contact layer and is prevented fromemerging from the first contact layer.

According to at least one embodiment of the radiation-emittingsemiconductor chip, a dielectric mirror layer is arranged in regionsbetween the semiconductor body and the current distribution layer. Forexample, the dielectric mirror layer comprises a plurality of layerpairs, wherein the layers of the layer pairs are different from eachother with respect to their refractive indices. For example, thedielectric mirror layer has between three and ten sublayers inclusive,wherein mutually adjoining sublayers differ from one another in terms oftheir refractive index. Preferably, the dielectric mirror layercomprises a layer sequence of alternating sublayers having a higherrefractive index and a lower refractive index. In particular, thesublayers with a higher refractive index have a lower thickness than thepartial layers with a lower refractive index.

In particular, the dielectric mirror layer is formed on the first and/oron the second contact layer in order to avoid absorption losses.

The dielectric mirror layer covers in particular the side surfaces ofthe recesses in places. For example, the dielectric mirror layer isarranged in a vertical direction between the connection layer and thecurrent distribution layer in places, in particular between theconnection layer and the insulation layer. This prevents radiation fromescaping from the semiconductor body at the side surface of the recess,and subsequently causing absorption losses at the first contact layerand/or the second contact layer.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the dielectric mirror layer overlaps in places withthe first contact layer and with the second contact layer in a plan viewof the semiconductor chip. Radiation absorption can thus be avoided orat least reduced both on the first contact layer and on the secondcontact layer.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the connection layer and/or the current distributionlayer contains a TCO material.

Transparent electrically conductive oxides (“TCO” for short) aretransparent, conductive materials, generally metal oxides, such as, forexample, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indiumoxide or indium tin oxide (ITO). In addition to binary metal-oxygencompounds, such as, for example, ZnO, SnO₂ or In₂O₃, ternarymetal-oxygen compounds, such as, for example, Zn₂SnO₄, CdSnO₃, ZnSnO₃,MgIn₂O₄, GaInO₃, Zn₂In₂O₅ or In₄Sn₃O₁₂ or mixtures of differenttransparent conductive oxides to the group of TCOs. Furthermore, theTCOs do not necessarily correspond to a stoichiometric composition andcan also be p- or n-doped.

The connection layer and the current distribution layer may be formedfrom the same material. Alternatively, the connection layer and thecurrent distribution layer may also have different material compositionsfrom one another. For example, the contact layer may be selectedregarding a good contact resistance to the semiconductor body and/or thecurrent distribution layer may be selected regarding a high transmissionfor radiation generated in the active region.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the dielectric mirror layer is arranged in placesbetween the semiconductor body and the second contact layer. Forexample, the dielectric mirror layer has a recess, in which the secondcontact layer directly adjoins the semiconductor body. By means of thedielectric mirror layer, it can be at least partially avoided thatradiation generated in the active area is absorbed by the second contactlayer.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the second contact layer has a mirror layer. Forexample, silver or aluminum is suitable for the mirror layer.Particularly high reflectivities in the visible spectral range can beachieved with silver. For example, the mirror layer has a thickness ofbetween 300 nm and 2 μm inclusive.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the second contact layer has a contacting layer. Thecontacting layer is formed to provide a good ohmic contact to thesemiconductor body, in particular to the second semiconductor layer. Forexample, the contacting layer has a thickness of between 3 nm and 100 nminclusive. The contacting layer is arranged in particular between themirror layer and the second semiconductor layer. A material which wouldform a comparatively poor contact to the semiconductor body is alsosuitable for the mirror layer, such as silver to n-conducting nitridecompound semiconductor material. For example, the contacting layercontains a TCO material, such as ITO or ZnO. In particular, a TCOmaterial for the contacting layer and silver for the mirror layer can beused to realize a contact layer, which is characterized by a highreflectivity and at the same time a good electrical contact with thesecond semiconductor layer.

According to at least one embodiment of the radiation-emittingsemiconductor chip, the second contact layer has a barrier layer. Inparticular, the mirror layer is arranged between the contacting layerand the barrier layer. For example, a metal such as Ti, Pt, Cu or Au ora TCO material such as ITO or ZnO is suitable as a barrier layer. Forexample, the barrier layer has a thickness of between 30 nm and 400 nminclusive. The mirror layer can be encapsulated with the barrier layer.A material is therefore also suitable for the mirror layer where thereis a risk of migration, e.g., due to moisture.

These materials and/or at least one or all of the layers can also beused for the first contact layer.

The following effects can in particular be achieved with theradiation-emitting semiconductor chip described.

The regions in which a metal layer, such as the first contact layer orthe second contact layer, is directly adjacent to the semiconductor chipare reduced. As a result, the brightness of the radiation-emittingsemiconductor chip increases at the same operating current.

Absorption losses are reduced via the insulation layer, in particular inthe current distribution layer. Even if a comparatively thick currentdistribution layer is used with regard to high transverse conductivity,absorption losses are reduced by means of the insulation layer. Inparticular, the insulation layer can fulfil the function of anangle-selective filter layer.

The regions in which the highest current density occurs during operationof the semiconductor chip can be adjusted by means of the at least oneopening of the insulation layer. In particular, these regions can belaterally spaced apart from the first contact layer. For example, theregions in which the highest current density occurs can also belaterally spaced apart from the first contact finger structure.

As a result, the amount of light generated in the active regionincreases and the loss of efficiency at high operating currents (alsoreferred to as “droop”) is reduced. A higher current densitydistribution and an associated homogeneous light distribution on theradiation exit surface of the semiconductor chip also increases theefficiency of a radiation conversion material arranged downstream,whereby the brightness of a component with such a radiation-emittingsemiconductor chip is further increased.

Furthermore, absorption losses at the second contact layer can also beavoided, for example, by means of the dielectric mirror layer. By meansof an arrangement of the dielectric mirror layer on a side surface ofthe semiconductor chip, for example, on the side surface of the recess,absorption losses on the second contact layer can be further avoided orat least reduced.

The second contact layer itself can be characterized by particularly lowabsorption losses, in particular by a multi-layer structure with acontacting layer and a mirror layer. Migration effects can be suppressedby means of the barrier layer, so that the freedom in the selection ofthe material for the mirror layer is increased.

BRIEF DESCRIPTION OF THE DRAWINGS

Further embodiments and functionalities result from the followingdescription of the exemplary embodiments in connection with the Figures.

The figures show:

FIG. 1A shows a first exemplary embodiment of a radiation-emittingsemiconductor chip in a schematic sectional view;

FIG. 1B shows a schematic representation of a section in a schematicsectional view;

FIG. 1C shows an enlarged representation of the section of the sectionalview in FIG. 1B;

FIG. 2A shows a simulation result of a current density distribution fora radiation-emitting semiconductor chip according to the an embodiment;

FIGS. 2B and 2C show simulation results of current density distributionsfor comparison structures;

FIG. 3 shows a second exemplary embodiment of a radiation-emittingsemiconductor chip in a schematic sectional view; and

FIG. 4 shows a third exemplary embodiment of a radiation-emittingsemiconductor chip in a schematic sectional view.

Identical, similar or similar acting elements are provided with the samereference signs in the figures.

The figures and the proportions of the elements shown in the figures arenot to be regarded as true to scale. Rather, individual elements may beoversized to make them easier to display and/or understand.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

FIG. 1A shows a first exemplary embodiment of a radiation-emittingsemiconductor chip 1, wherein FIG. 1B shows a section of saidsemiconductor chip in a sectional view. In plan view, theradiation-emitting semiconductor chip can be formed, for example, asshown in FIG. 2A.

The radiation-emitting semiconductor chip 1 has a semiconductor body 2with a semiconductor layer sequence. The semiconductor body 2 comprisesin particular an active region 20 intended for generating radiation,which is arranged between a first semiconductor layer 21 of a firstconductivity type (for example, p-conducting) and a second semiconductorlayer 22 of a second conductivity type different from the firstconductivity type (for example, n-conducting). The semiconductor body 2,in particular the active region 20, is preferably based on a III-Vcompound semiconductor material, in particular on a nitride compoundsemiconductor material.

“Based on nitride compound semiconductor material” in the presentcontext means that at least one layer of the semiconductor regionscomprises a nitride III/V compound semiconductor material, preferablyAl_(n)Ga_(m)In_(1-n-m)N, wherein 0≤n≤1, 0≤m≤1 and n+m≤1. In this case,this material does not necessarily have to have a mathematically exactcomposition according to the above formula. Rather, it may have one ormore dopants and additional constituents, which substantially do notchange the characteristic physical properties of theAl_(n)Ga_(m)In_(1-n-m)N material. For the sake of simplicity, however,the above formula only contains the essential constituents of thecrystal lattice (Al, Ga, In, N), even if these may be partially replacedby small quantities of other substances.

The semiconductor body 2 is arranged on a carrier 29. In particular, thecarrier is a growth substrate for the semiconductor layer sequence ofthe semiconductor body. For a semiconductor body based on nitridecompound semiconductor material, sapphire, silicon carbide or galliumnitride are suitable as growth substrates.

A first contact layer 3 and a second contact layer 4 are arranged on aradiation exit surface 28 facing away from the carrier 29. The firstcontact layer 3 has a first contact area 31 for the external electricalcontacting of the first semiconductor layer 21. The second contact layer4 has a second contact area 41 intended for the external electricalcontacting of the second semiconductor layer.

The first contact layer 3 furthermore has a first contact fingerstructure 35, which is connected to the first contact area 31.Accordingly, the second contact layer 4 has a second contact fingerstructure 45, which is electrically conductively connected to the secondcontact area 41.

In the exemplary embodiment shown in FIG. 2A, the contact fingerstructures 35, 45 each comprise two contact fingers, which extend fromthe respective contact area 31, 41. The contact fingers each have akink, so that the two contact fingers together form a frame-shapedstructure. Deviating therefrom, however, other structures are alsoconceivable, for example, contact fingers, which are curved in places, acomb-shaped embodiment or an embodiment of the contact finger structuressimilar to the veining of a leaf. The number of contact fingers can alsobe varied within wide limits. The number of contact fingers of the firstcontact finger structure 35 and of the second contact finger structure45 can also be different from one another. For example, the number ofcontact fingers of the first contact finger structure is larger than thenumber of contact fingers of the second contact finger structure.

The first contact finger structure 35 and the second contact fingerstructure 45 overlap in a plan view of the radiation-emittingsemiconductor chip. In this way, areas of the semiconductor chip, inwhich the active area 20 is removed anyway for the formation of thesecond contact finger structure 45, can also be used for the currentdistribution for making electrical contact with the first semiconductorlayer 21.

Deviating from the exemplary embodiment described, the first contactfinger structure 35 and the second contact finger structure 45 can alsooverlap to a smaller percentage. For example, the first contact fingerstructure 35 may have at least one contact finger, which does notoverlap with the second contact finger structure 45 over at least halfof its main axis of extension.

The second contact layer 4, in particular the second contact fingerstructure 45, adjoins the second semiconductor layer 22 in a recess 25of the semiconductor body. By means of the recess, the secondsemiconductor layer 22 covered by the first semiconductor layer 21 isthus exposed in places for making contact with the second contact layer4.

An insulation layer 6 is arranged between the first contact layer 3 andthe second contact layer 4 in vertical direction. The insulation layer 6covers the radiation exit surface 28 of the semiconductor body 2 inregions. In the exemplary embodiment shown, the insulation layer 6 alsocovers the side surfaces 250 of the recesses 25.

Furthermore, the semiconductor chip 1 comprises a current distributionlayer 51, which is electrically conductively connected to the firstcontact layer 3. Furthermore, the radiation-emitting semiconductor chip1 comprises a connection layer 52. The connection layer 52 iselectrically conductively connected to the first contact layer via thecurrent distribution layer 51. The insulation layer 6 is arranged inplaces between the current distribution layer 51 and the connectionlayer 52, in particular in the vertical direction.

The insulation layer 6 has a plurality of openings 6 o, in which thecurrent distribution layer 51 and the connection layer 52 adjoin oneanother. During operation of the radiation-emitting semiconductor chip,the current density impressed into the semiconductor chip is highest ina region vertically below the openings 60. The openings in theinsulation layer 6 can therefore be used to define the regions, in whichthe current density is highest. In contrast, without an insulation layerbetween the current distribution layer 51 and the connection layer 52,the current density in the region around the first contact layer 3 wouldbe highest. In lateral regions further away from the contact layer 3,however, only a comparatively small charge carrier injection would takeplace.

The openings 60 are expediently arranged in the lateral direction insuch a way that in lateral direction a homogeneous current densitydistribution is achieved, as far as possible. In particular, thearrangement of the openings on the radiation exit surface 28 is alsoselected on the basis of the respective material parameters of thecurrent distribution layer 51 and of the connection layer 52, in such away that a current density distribution, which is as homogeneous aspossible, is achieved.

For example, edge regions of the radiation exit surface 28 can beprovided with more openings than central regions of the radiation exitsurface. The distances between the openings can be between 20 μm and 50μm inclusive. A suitable diameter of the openings is in particularbetween 1 μm and 15 μm, for example, between 2 μm and 6 μm inclusive.

Despite the openings 6 o, the insulation layer 6 can cover theconnection layer over a large area, for example, to at least 30%, to atleast 50% or at least 70% of the area of the connection layer in a planview of the semiconductor chip. For example, the insulation layer coversthe connection layer of at most 90% or at most 95%.

The connection layer 52 has a lower thickness than the currentdistribution layer 51. In contrast to the current distribution layer 51,the connection layer 52 does not have to have a high transverseconductivity. A comparatively small thickness of the connection layer 52can reduce absorption losses in the connection layer.

As seen from the active region 20, the insulation layer 6 is arranged infront of the current distribution layer 51 at least in places. Theinsulation layer 6 can in particular fulfil the function of a filterlayer, wherein the filter layer has a higher reflectivity for radiationthat extends at comparatively large angles to the normal to the mainextension plane of the active region 20 than for radiation that impingesat a comparatively small angle to the normal. As a result, radiationcomponents, which could not escape from the semiconductor chip 1 anywaydue to total reflection can already be reflected in a largely loss-freemanner at the insulation layer 6. Absorption losses in the currentdistribution layer 51 can thus be reduced. The insulation layer can, forexample, cover at least 50%, approximately at least 70% or at least 90%of the entire base area of the semiconductor chip in a plan view.Absorption losses can thus be avoided particularly efficiently by meansof the insulation layer 6.

In particular, the transmission can be increased in comparison to aconventional semiconductor chip for radiation in a first angular range.Here, the first angular range refers to angles α with 0°≤α≤α_(tot),wherein α_(tot) indicates the critical angle of total reflection. Atangles α which are larger than the critical angle α_(tot), i.e., in asecond angular range with α_(tot)<α≤90°, the absorption of the describedsemiconductor chip is considerably reduced compared to a conventionalsemiconductor chip. The first angular range represents a conical regionwith a main axis parallel to the vertical direction. The critical angleof total reflection α_(tot) is determined by the refractive index of thesemiconductor body 2 and the refractive index of the surrounding medium,wherein, for example, a semiconductor body 2 formed from GaN with arefractive index n=2.5 and a surrounding medium with a refractive indexn=1.55 results in a critical angle α_(tot)=arcsin(1.55/2.5)=38.3°.

A particularly efficient filter effect can result from a multi-layerstructure of the insulation layer with an alternating arrangement oflayers with a lower and higher refractive index. However, even with asingle-layer insulation layer, a filtering effect can already beachieved.

On the side facing away from the carrier 29, the radiation-emittingsemiconductor chip 1 can be closed off in regions by a passivation layer7. The passivation layer serves in particular to protect thesemiconductor body against external stresses such as moisture, dust ormechanical stress.

The current distribution layer 51 and the connection layer 52 can eachhave the same material or different materials from one another. Thecurrent distribution layer and the connection layer preferably contain aTCO material, for example, ITO.

The first contact layer 3 and the second contact layer 4 or at least apartial layer thereof can each be metallic. External electricalcontacting of the semiconductor chip 1 is thereby simplified.

A possible multi-layer structure of the second contact layer 4 isschematically shown in FIG. 1C.

The second contact layer comprises a connecting layer 42, a mirror layer43 and a barrier layer 44.

For example, silver or aluminum is suitable for the mirror layer.Particularly high reflectivities in the visible spectral range can beachieved with silver. For example, the mirror layer has a thickness ofbetween 300 nm and 2 μm inclusive.

A good ohmic contact to the semiconductor body can be formed by means ofthe connecting layer 42, in particular when using a material for themirror layer 43, which would form a comparatively poor contact with thesemiconductor body, such as silver to n-conducting nitride compoundsemiconductor material. For example, the contacting layer has athickness of between 3 nm and 100 nm inclusive. The contacting layer isarranged in particular between the mirror layer and the secondsemiconductor layer. For example, the contacting layer contains a TCOmaterial, such as ITO or ZnO. In particular with a TCO material for thecontacting layer and silver for the mirror layer, the second contactlayer 4 can be characterized by high reflectivity and at the same timegood electrical contact to the second semiconductor layer.

A metal, such as Ti, Pt, Cu or Au or a TCO material, such as ITO or ZnOis suitable for the barrier layer 44. For example, the barrier layer hasa thickness of between 30 nm and 400 nm inclusive. The mirror layer 43can be encapsulated by means of the barrier layer. A material is thusalso suitable for the mirror layer, where there is a risk of migration,e.g., due to moisture, in particular silver.

The first contact layer 3 can also have a multi-layer structure and haveat least one of the materials described in connection with the secondcontact layer.

Simulation results of the lateral current density distribution for anabove-described radiation-emitting semiconductor chip 1 are shown inFIG. 2A, wherein regions of the semiconductor body with a high currentdensity are represented bright and regions with a low current densityare represented dark. By means of the lateral separation of the directcharge carrier injection via the connection layer 52 into thesemiconductor body 2 from the position of the contact finger structure35, the homogeneity of the charge carrier density in the lateraldirection can be significantly increased.

This is represented by simulation results for comparison structuresshown in FIGS. 2B and 2C. In the case of the semiconductor chips shownin FIG. 2C, a first contact structure 91 and a second contact structure92 are arranged alongside one another without overlapping. As a result,a comparatively large area of the semiconductor chip 1 is lost forradiation generation due to the large total area of the contactstructures 91, 92.

In the exemplary embodiment shown in FIG. 2B, the first contactstructure 91 and the second contact structure 92 overlap in a plan viewof the semiconductor chip. Due to the smaller area covered with metal,the absorption losses are also reduced. However, there is asignificantly increased current density in the immediate vicinity of thecontact bars arranged one above the other, since the charge carrierschoose the shortest current path between the contact bars and thestructure of the semiconductor chip, in contrast to the presentinvention, does not provide countermeasures for this. Therefore, thereis no laterally homogeneous current impression.

By means of the described radiation-emitting semiconductor chip,absorption losses can be significantly minimized compared to the stateof the art and, furthermore, the homogeneity of the current densitydistribution in the lateral direction can be increased.

The second exemplary embodiment shown in FIG. 3 correspondssubstantially to the first exemplary embodiment in connection with theFIGS. 1A, 1B and 1C.

In contrast to this, the radiation-emitting semiconductor chip 1additionally has a dielectric mirror layer 65. The dielectric mirrorlayer 65 is arranged in regions between the semiconductor body 2 and thefirst contact layer 3. In particular, the dielectric mirror layer 65overlaps with the first contact layer 3 and the second contact layer 4.The dielectric mirror layer 65 has a recess 650, in which the secondcontact layer 4 is adjacent to the semiconductor body 2, in particularto the second semiconductor layer 22. The dielectric mirror layer 65,for example, has a plurality of layer pairs, wherein the layers of alayer pair each have different refractive indices from one another. Thematerials specified for the insulation layer in the general part of thedescription are particularly suitable for the dielectric mirror layer.The individual sublayers of the dielectric mirror layer are notexplicitly shown in the figure for a simplified representation.

By means of the dielectric mirror layer 65, radiation absorption on thesecond contact layer 4 can be avoided. This is represented by means ofan arrow 8, which indicates a radiation reflected at the dielectricmirror layer 65. Furthermore, the dielectric mirror layer 65 also coversthe side surface 250 of the recess 25. This prevents radiation escapingthrough the side surface from being absorbed at the first contact layer3 or at the second contact layer 4.

The dielectric mirror layer is arranged in particular in regions betweenthe insulation layer 6 and the semiconductor body 2. Furthermore, thedielectric mirror layer 65 extends, vied in the vertical direction, inregions between the current distribution layer 51 and the connectionlayer 52. In contrast, the dielectric mirror layer 65 and the connectionlayer 52 can also be arranged without overlapping with respect to oneanother. The current distribution layer 51 can completely cover thedielectric mirror layer 65 in a plan view of the semiconductor chip.

The third exemplary embodiment shown in FIG. 4 corresponds substantiallyto the second exemplary embodiment described in connection with FIG. 3.

In contrast to this, the recess 25 is completely or at least almostcompletely filled with material of the dielectric mirror layer 65 andthe second contact layer 4. In this exemplary embodiment, the electricalcontacting of the second semiconductor layer 22 is carried out viarecesses 650 of the dielectric mirror layer 65 arranged next to oneanother.

Preferably, the lateral extent of the recesses 650 is also limited alonga lateral main extension direction of the associated contact finger ofthe second contact finger structure 45. The recesses are thus surroundedalong their entire circumference by material of the dielectric mirrorlayer. In other words, the second contact finger structure 45 can becompletely underlaid with material of the dielectric mirror layer atleast in some places along the main extension direction of theassociated contact finger in a lateral transverse direction to the mainextension direction of the contact finger. Radiation absorption lossesat the second contact layer 4 can thus be further reduced.

Furthermore, FIG. 4 shows a passivation layer 7, which is formed on theside of the semiconductor body 2 facing away from the carrier 29. Thispassivation layer can also be used in the exemplary embodiment shown inFIG. 3.

In the lateral direction, the contact finger of the first contact fingerstructure 35 overlapping with the recess 25 has a smaller lateral extentthan the associated contact finger of the second contact fingerstructure 45. Absorption losses on the second contact finger structurecan thus be further reduced.

The invention is not restricted to the exemplary embodiments by thedescription on the basis of the exemplary embodiments. Rather, theinvention includes each new feature and each combination of features,which includes in particular each combination of features in the patentclaims, even if this feature or this combination itself is notexplicitly indicated in the patent claims or exemplary embodiments.

1-20. (canceled)
 21. A radiation-emitting semiconductor chip comprising:a semiconductor body having an active region configured to generateradiation; a first contact layer having a first contact area forexternal electrical contacting the semiconductor chip and a firstcontact finger structure connected to the first contact area; a secondcontact layer having a second contact area for external electricalcontacting the semiconductor chip and a second contact finger structureconnected to the second contact area, wherein the first contact fingerstructure and the second contact finger structure overlap in places inplan view of the semiconductor chip; a current distribution layerelectrically conductively connected to the first contact layer; aconnection layer electrically conductively connected to the firstcontact layer via the current distribution layer; and an insulationlayer containing a dielectric material, wherein the insulation layer isarranged in places between the connection layer and the currentdistribution layer, wherein the insulation layer has at least oneopening, in which the connection layer and the current distributionlayer adjoin one another, and wherein a diameter of the opening isbetween 2 μm and 6 μm inclusive.
 22. The radiation-emittingsemiconductor chip according to claim 21, wherein the insulation layercovers the connection layer up to at least 30% of the area of theconnection layer.
 23. The radiation-emitting semiconductor chipaccording to claim 21, wherein the diameter of the opening is between 1μm and 20 μm inclusive.
 24. The radiation-emitting semiconductor chipaccording to claim 21, wherein the insulation layer is formed as afilter layer configured to predominantly transmit incident radiationwithin a first angular range and to predominantly reflect incidentradiation within a second angular range.
 25. The radiation-emittingsemiconductor chip according to claim 21, wherein the insulation layeradjoins the connection layer and the current distribution layer.
 26. Theradiation-emitting semiconductor chip according to claim 21, wherein theconnection layer has a thickness less than the current distributionlayer.
 27. The radiation-emitting semiconductor chip according to claim21, wherein the first contact area and the second contact area areaccessible for external electrical contacting from a radiation exitsurface of the semiconductor body.
 28. The radiation-emittingsemiconductor chip according to claim 21, wherein at least 50% of theentire area of the second contact finger structure overlaps with thefirst contact finger structure.
 29. The radiation-emitting semiconductorchip according to claim 21, wherein the semiconductor body has at leastone recess extending from a radiation exit surface through the activeregion, and wherein the second contact layer located in the recess iselectrically conductively connected to the semiconductor body.
 30. Theradiation-emitting semiconductor chip according to claim 21, wherein theinsulation layer is arranged between the first contact layer and thesecond contact layer.
 31. The radiation-emitting semiconductor chipaccording to claim 21, wherein there is no direct vertical current pathbetween the first contact layer and the semiconductor body at any placeof the semiconductor chip.
 32. The radiation-emitting semiconductor chipaccording to claim 21, further comprising a dielectric mirror layerarranged in regions between the semiconductor body and the currentdistribution layer.
 33. The radiation-emitting semiconductor chipaccording to claim 32, wherein the dielectric mirror layer overlaps inplaces with the first contact layer and with the second contact layer ina plan view of the semiconductor chip.
 34. The radiation-emittingsemiconductor chip according to claim 32, wherein the dielectric mirrorlayer is arranged in places between the semiconductor body and thesecond contact layer.
 35. The radiation-emitting semiconductor chipaccording to claim 32, wherein the dielectric mirror layer comprises alayer sequence composed of alternating sublayers having a higherrefractive index and a lower refractive index.
 36. Theradiation-emitting semiconductor chip according to claim 21, wherein theconnection layer and/or the current distribution layer contains a TCOmaterial.
 37. The radiation-emitting semiconductor chip according toclaim 21, wherein the second contact layer comprises a contacting layer,a mirror layer and a barrier layer, and wherein the mirror layer isarranged between the contacting layer and the barrier layer.
 38. Theradiation-emitting semiconductor chip according to claim 37, wherein thecontacting layer contains a TCO material and the mirror layer containssilver.